STPS30170DJF(2011) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170DJF Datasheet PDF : 7 Pages
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STPS30170DJF
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
32 PF(AV)(W)
28
δ = 0.5 δ = 1
24
δ = 0.2
20
δ = 0.1
16
δ = 0.05
T
12
δ = tp / T tp
8
4
IF(AV)(A)
0
0
5
10
15
20
25
30
35
40
IF(AV)(A)
35
30
25
20
15
10
T
5
δ = tp / T tp
0
0
25
Rth(j-a) = Rth(j-c)
50
75
Tamb(°C)
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration
200 IM(A)
180
160
140
120
100
80
60
40 IM
20
0
1.E-03
t
δ = 0.5
1.E-02
1.E-01
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
t(s)
1.E+00
Z /R 1.0
th(j-c) th(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Doc ID 16749 Rev 3
3/7
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