STPS30170DJF(2011) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170DJF Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS30170DJF
Table 2. Absolute ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
170
V
IF(RMS) Forward rms current
45
A
IF(AV) Average forward current
Tc = 80 °C, δ = 0.5
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
Tc = 25 °C
200
A
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
12500
W
Tstg Storage temperature range
-65 to + 175 °C
Tj Maximum operating junction temperature (1)
150
°C
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
2.5
°C/W
Table 4.
Symbol
Static electrical characteristics (anode terminals short circuited)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
-
Tj = 125 °C
-
Tj = 25 °C
-
IF = 15 A
VF(2) Forward voltage drop
Tj = 125 °C
-
Tj = 25 °C
-
Tj = 125 °C IF = 30 A
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.0046 IF2(RMS)
-
15
µA
4
12
mA
-
0.88
0.65 0.70
V
-
0.95
0.71 0.79
2/7
Doc ID 16749 Rev 3
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