STD2NK100Z Просмотр технического описания (PDF) - STMicroelectronics
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STD2NK100Z
STMicroelectronics
STD2NK100Z Datasheet PDF : 23 Pages
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STD2NK100Z, STP2NK100Z, STU2NK100Z
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
Zero gate voltage drain
current
Gate-body leakage
current
VGS = 0 V, VDS = 1000 V
VGS = 0 V, VDS = 1000 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ±30 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 0.9 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
1000
V
1
µA
50
µA
±10
µA
3
3.75
4.5
V
6.25
8.5
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
499
-
53
-
pF
9
Coss eq. (1)
Equivalent output
capacitance
VGS = 0 V, VDS = 0 V to 800 V
-
28
-
pF
RG
Gate input resistance
f = 1 MHz, open drain
-
6.6
-
Ω
Qg
Total gate charge
VDD = 800 V, ID = 1.85 A,
16
Qgs
Gate-source charge
VGS = 0 to 10 V
-
3
-
nC
Qgd
Gate-drain charge
(see Figure 16. Test circuit for gate charge
behavior)
9
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to
80% VDSS.
Symbol
td(on)
tr
td(off)
tr
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 500 V, ID = 0.9 A, RG = 4.7 Ω,
7.2
VGS = 10 V
6.5
(see Figure 15. Test circuit for resistive load
-
switching times and Figure 20. Switching
41.5
-
ns
time waveform)
32.5
DS5280 - Rev 3
page 3/23
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