STB200NF03-1(2002) Просмотр технического описания (PDF) - STMicroelectronics

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STB200NF03-1
(Rev.:2002)

N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STB200NF03/-1 STP200NF03

Thermal Resistance Rthj-a vs PCB Copper Area

Max Power Dissipation vs PCB Copper Area

Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,

under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the Allowable Current in Avalanche

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)

tAV is the Time in Avalanche

To derate above 25 oC, at fixed IAV, the following equation must be applied:

Where:

IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)

Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

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