ST3413 Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3413 Datasheet PDF : 7 Pages
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P Channel Enhancement Mode MOSFET
-3.4A
ST3413
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.35
-0.8 V
Gate Leakage Current
IGSS VDS=0V,VGS=+/-12V
100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
ID(on)
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V -6.0
-1
-5 uA
A
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(on)
gfs
VSD
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-1.5A
VDS=-5V,ID=-2.8V
IS=-1.6A,VGS=0V
0.076 0.095
0.097 0.120 Ω
0.123 0.145
6
S
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID≡-2.8A
VDS=-6V,VGS=0V
F=1MHz
VDD=-6V,RL=6Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
4.8 8
1.0
nC
1.0
485
85
pF
40
10 25
13 60 nS
18 70
15 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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