ST3413 Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3413 Datasheet PDF : 7 Pages
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P Channel Enhancement Mode MOSFET
-3.4A
ST3413
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃) TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
TA=25℃
TA=70℃
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-20
+/-12
-2.8
-2.0
-8
-1.4
0.33
0.21
150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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