ST3413 Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST3413

P Channel Enhancement Mode MOSFET -3.4A

STANSON TECHNOLOGY 

P Channel Enhancement Mode MOSFET

-3.4A

ST3413

DESCRIPTION

The ST3413 is the P-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other batter powered circuits where high-side

switching, and low in-line power loss are needed in a very small outline surface mount

package.

PIN CONFIGURATION

SOT-23-3L

3

D

G

S

1

2

1.Gate 2.Source 3.Drain

3

13YA

FEATURE

z -20V/-3.4A, RDS(ON) = 95m-ohm

@VGS = -4.5V

z -20V/-2.4A, RDS(ON) = 120m-ohm

@VGS = -2.5V

z -20V/-1.7A, RDS(ON) = 145m-ohm

@VGS = -1.8V

z Super high density cell design for

extremely low RDS(ON)

z Exceptional on-resistance and

maximum DC current capability

z SOT-23-3L package design

1

2

1A: Part Marking Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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