SST2602 Просмотр технического описания (PDF) - Secos Corporation.
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SST2602 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2602
6.3A, 20V,RDS(ON) 34mΩ
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Min. Typ.
20
_
Max. Unit
_
V
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
_
0.1
_
o
V/ C
Gate Threshold Voltage
VGS(th)
0.5
_
_
V
Gate-Source Leakage Current
IGSS
_
_
±100
nA
Drain-Source Leakage Current (Tj=25oC)
_
IDSS
Drain-Source Leakage Current(Tj=55oC)
_
_
Static Drain-Source On-Resistance2
_
RD S(O N )
_
_
1
uA
_
10
uA
_
30
_
34
mΩ
_
50
Total Gate Charge2
_
_
90
Qg
_
8.7
16
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Qgs
_
1.5
_
nC
Qgd
_
3.6
_
Td(ON)
_
6
_
Rise Time
Turn-off Delay Time
Tr
_
14
_
nS
Td(Off)
_
18.4
_
Fall Time
Input Capacitance
Tf
_
2.8
_
Ciss
_
603
1085
Output Capacitance
Coss
_
144
_
pF
Reverse Transfer Capacitance
Crss
_
111
_
Forward Transconductance
Gfs
_
13
_
S
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
VDS=VGS, ID=250uA
VGS=±12V
VDS=20V,VGS=0
VDS=16V,VGS=0
VGS=10V, ID=5.5A
VGS=4.5V, ID=5.3A
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1.0A
ID=5.3A
VDS=10V
VGS= 4.5V
VDD=15V
ID=1A
VGS=10V
RG=2Ω
RD=15Ω
VGS=0V
VDS=15V
f=1.0MHz
VDS=5V, ID=5.3A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Change
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
16.8
11
Max.
1.2
_
_
Unit Test Condition
V
IS=1.2A, VGS=0V.
nS
IS=5A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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