ESD7016 Просмотр технического описания (PDF) - ON Semiconductor
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ESD7016 Datasheet PDF : 8 Pages
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ESD7016, SZESD7016
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 2)
Clamping Voltage
TLP (Note 3)
See Figures 6 through 9
VRWM
VBR
IR
VC
VC
VC
I/O Pin to GND
IT = 1 mA, I/O Pin to GND
VRWM = 5 V, I/O Pin to GND
IPP = 1 A, I/O Pin to GND (8 x 20 ms pulse)
IEC61000−4−2, ±8 kV Contact
IPP = ±8 A
IPP = ±16 A
5.0
V
5.5
V
1.0
mA
10
V
See Figures 1 and 2
V
14.6
20.5
Junction Capacitance
Junction Capacitance
Difference
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
DCJ VR = 0 V, f = 1 MHz between I/O Pins and GND
0.15
0.20
pF
0.03
pF
1. Surge current waveform per Figure 5.
2. For test procedure see Figures 3 and 4 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
90
80
70
60
50
40
30
20
10
0
−10
−20 0 20 40 60 80 100 120 140
TIME (ns)
Figure 1. IEC61000−4−2 +8 KV Contact
Clamping Voltage
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
−20 0 20 40 60 80 100 120 140
TIME (ns)
Figure 2. IEC61000−4−2 −8 KV Contact
Clamping Voltage
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2
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