RMLV0408E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RMLV0408E

4Mb Advanced LPSRAM (512k word × 8bit)

Renesas Electronics 

RMLV0408E Series

Write Cycle (3) (CS# CLOCK)

A0~18

CS#

tWC

Valid address

tAW

tAS

tCW

tWR

WE#

tWP *22

OE#

VIH

OE# = “H” level

I/O0~7

tDW

tDH

Valid Data

Note

22. tWP is the interval between write start and write end.

A write starts when both of CS# and WE# become active.

A write is performed during the overlap of a low CS# and a low WE#.

A write ends when any of CS# or WE# becomes inactive.

Preliminary

R10DS0217EJ0001 Rev.0.01

2013.09.10

Page 9 of 10

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