RMLV0408E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RMLV0408E

4Mb Advanced LPSRAM (512k word × 8bit)

Renesas Electronics 

RMLV0408E Series

Write Cycle (1) (WE# CLOCK, OE#=”H” while writing)

A0~18

tWC

Valid address

tCW

CS#

WE#

tAW

tAS

tWP *14

tWR

OE#

I/O0~7

tWHZ *15,16

tOHZ *15,16

*17

tDW

tDH

Valid Data

Preliminary

Note

14. tWP is the interval between write start and write end.

A write starts when both of CS# and WE# become active.

A write is performed during the overlap of a low CS# and a low WE#.

A write ends when any of CS# or WE# becomes inactive.

15. tOHZ and tWHZ are defined as the time when the I/O pins enter a high-impedance state and are not referred to

the I/O levels.

16. This parameter is sampled and not 100% tested.

17. During this period, I/O pins are in the output state so input signals must not be applied to the I/O pins.

R10DS0217EJ0001 Rev.0.01

2013.09.10

Page 7 of 10

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