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RMPA1765(2005) Просмотр технического описания (PDF) - Fairchild Semiconductor

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RMPA1765 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Absolute Ratings1
Parameter
Symbol
Value
Units
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
5.0
2.6 to 3.5
3.5
+10
-55 to +150
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Parameter
Operating Frequency
CDMA Operation
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28 dBm
PAEd (digital) @ +16 dBm
PAEd (digital) @ +16 dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25 MHz Offset
±2.25 MHz Offset
General Characteristics
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs2, 3
Ruggedness w/ Load Mismatch3
Case Operating Temperature
DC Characteristics
Quiescent Current
Reference Current
Shutdown Leakage Current
Symbol Min Typ Max Units
f
1720
1780 MHz
Comments
SSg
Gp
Po
PAEd
Itot
26
28
26
28
16
38
9
25
490
130
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
Po = 0 dBm
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode = 2.0V
Vmode = 0V
Vmode 2.0V
Vmode = 0V
Vmode 2.0V
Vmode 2.0V, Vcc = 1.4 V
Po = +28 dBm, Vmode = 0V
Po = +16 dBm, Vmode = 2.0V
ACPR1
-50
-52
ACPR2
-60
-68
dBc Po = +28 dBm; Vmode = 0V
dBc Po = +16 dBm; Vmode = 2V
dBc Po = +28 dBm; Vmode = 0V, IS-95
dBc Po = +16 dBm; Vmode = 2V
VSWR
NF
Rx No
2fo-5fo
S
Tc
2.0:1
4
dB
-139
dBm/Hz Po +28 dBm; 1840 to 1870 MHz
-30 dBc Po +28 dBm
-60 dBc Load VSWR 5.0:1
10:1
No permanent damage.
-30
85
°C
Iccq
Iref
Icc(off)
45
5
8
1
5
mA Vmode 2.0V
mA Po < +28 dBm
µA No applied RF signal.
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1750 MHz and load VSWR 1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA1765 Rev. D
2
www.fairchildsemi.com

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