RMPA2265 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
RMPA2265
Fairchild Semiconductor
RMPA2265 Datasheet PDF : 12 Pages
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Absolute Ratings 1
Symbol
Parameter
Ratings
Units
VCC1, VCC2
Vref
Vmode
PIN
TSTG
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
5.0
2.6 to 3.5
3.5
+10
-55 to +150
V
V
V
dBm
°C
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics (1920 to 1980 MHz)1
Symbol
Parameter
f
Operating Frequency
WCDMA Operation
Min Typ Max Units
1920
1980 MHz
Comments
Gp
Power Gain
Po
Linear Output Power
PAEd
Itot
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Leakage
Ratio
ACLR1
±5.00MHz Offset
1920–1980MHz
ACLR2
±10.00MHz Offset
1920–1980MHz
General Characteristics
26
28
26
28
16
42
9
25
440
120
-40
-42
-54
-66
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
VSWR
NF
Rx No
2fo – 5fo
S
Tc
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression3
Spurious Outputs2, 3
Ruggedness with Load
Mismatch 3
Case Operating Temperature -30
2.0:1
4
-142
-50
-60
10:1
dB
dBm/
Hz
dBc
dBc
Po ≤ +28dBm, 2110 to 2170MHz
Po ≤ +28dBm
Load VSWR ≤ 5.0:1
No permanent damage
85
°C
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off)
Shutdown Leakage Current
45
mA Vmode ≥ 2.0V
5
mA Po ≤ +28dBm
1
5
µA No applied RF signal
Notes:
1. All parameters met at TC = +25°C, VCC = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise
noted.
2. All phase angles.
3. Guaranteed by design.
RMPA2265 Rev. K
2
www.fairchildsemi.com
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