RMPA2550 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

RMPA2550

2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier

Fairchild Semiconductor 

Performance Data (Continued)

802.11g/a Temperature Dependency (continued)

RMPA2550 Total Current Vs. Modulated Pout

2.45 GHz VM, VC=3.3V T=-40, +25, +85C

Data Rate 54Mbps OFDM 16.7MHz

300

RMPA2550 Total Current Vs. Modulated Pout

5.45 GHz VM, VC=3.3V T=-40, +25, +85C

Data Rate 54Mbps OFDM 16.7MHz

300

250

T=-40C

T=+25C

T=+85C

200

T=-40C

250

T=+25C

T=+85C

200

150

150

100

0

30

5

10

15

20

25

Modulated Power Out (dBm)

RMPA2550 Gain Vs. Modulated Pout

2.45 GHz VM, VC=3.3V T=-40, +25, +85C

Data Rate 54Mbps OFDM 16.7MHz

29

T=-40C

T=+25C

T=+85C

28

27

26

25

24

23

0

5

10

15

20

25

Modulated Power Out (dBm)

802.11g/a VM Dependency

RMPA2550 Total Measured EVM Vs. Modulated Pout

2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C

Data Rate 54Mbps OFDM 16.7MHz

10

VM=2.7V

8

VM=2.8V

VM=2.9V

VM=3.0V

VM=3.1V

VM=3.2V

6

VM=3.3V

4

Includes 0.8% System Level EVM

2

0

0

5

10

15

20

25

Modulated Power Out (dBm)

©2004 Fairchild Semiconductor Corporation

100

0

30

29

28

27

26

25

24

23

0

5

10

15

20

25

Modulated Power Out (dBm)

RMPA2550 Gain Vs. Modulated Pout

5.45 GHz VM, VC=3.3V T=-40, +25, +85C

Data Rate 54Mbps OFDM 16.7MHz

T=-40C

T=+25C

T=+85C

5

10

15

20

25

Modulated Power Out (dBm)

RMPA2550 Total Measured EVM Vs. Modulated Pout

5.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C

Data Rate 54Mbps OFDM 16.7MHz

10

VM=2.7V

8

VM=2.8V

VM=2.9V

VM=3.0V

VM=3.1V

6

VM=3.2V

VM=3.3V

4

Includes 0.8% System Level EVM

2

0

0

5

10

15

20

25

Modulated Power Out (dBm)

RMPA2550 Rev. D

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