RF1005TF6S Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

RF1005TF6S

Super Fast Recovery Diode

ROHM Semiconductor 

Data Sheet

Super Fast Recovery Diode

RF1005TF6S

Series

Standard Fast Recovery

Applications

General rectification

Dimensions (Unit : mm)

10

+0.3

−0.1

3.2 ±0.2

+0.3

4.5 −0.1

+0.2

2.8 −0.1

Features

1)Single type.(TO-220)

2)High switching speed

Construction

Silicon epitaxial planer

1.02

1.12

0.76

(1)

(3)

2.54 ±0.5

2.54 ±0.5

+0.1

0.62 −0.05

ROHM : TO220NFM

Manufacture Year

Manufacture Week

2.6 ±0.5

Structure

(1) (3)

Absolute maximum ratings (Tc=25C)

Parameter

Symbol

Repetitive peak reverse voltage

VRM

Reverse voltage

VR

Average rectified forward current

Io

Forward current surge peak

IFSM

Junction temperature

Tj

Storage temperature

Tstg

Conditions

Duty  0.5

Direct voltage

60Hz half sin wave, Resistance load, Tc=78C

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25C

Limits

600

600

10

100

150

55 to 150

Electrical characteristics (Tj=25C)

Parameter

Symbol

Forward voltage

VF

Reverse current

IR

Reverse recovery time(*)

trr

Thermal resistance(*)

Rth(j-c)

(*) : Design assurance without measurement.

Conditions

IF=10A

VR=600V

IF=0.5A,IR=1A,Irr=0.25×IR

junction to case

Min.

Typ.

-

1.4

-

0.05

-

30

-

-

Max.

1.7

10

40

3.5

Unit

V

V

A

A

C

C

Unit

V

μA

ns

C/ W

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© 2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.05 - Rev.A

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