RB225NS-40TL Просмотр технического описания (PDF) - ROHM Semiconductor
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RB225NS-40TL Datasheet PDF : 9 Pages
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Schottky Barrier Diode
RB225NS-40
Datasheet
Application
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Features
1) Cathode common dual type.
(LPDS)
2) Low IR
RB225
NS40
1
Construction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
Taping specifications (Unit : mm)
LPDS
Structure
Cathode
Anode Anode
Absolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
40
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current (*1)
Io
30
A
Forward current surge peak (60Hz・1cyc) (*1) IFSM
100
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
Electrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Thermal resistance
Symbol Min.
VF
-
IR
-
Rth(j-c) -
Typ. Max.
0.53 0.63
0.08 0.5
- 2.00
Unit
V
mA
°C/W
Conditions
IF=15A
VR=40V
junction to case
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2015.07 - Rev.D
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