RA20H8087M-101 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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RA20H8087M-101
MITSUBISHI ELECTRIC
RA20H8087M-101 Datasheet PDF : 10 Pages
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<Silicon RF Power Modules >
RA20H8087M
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
60
50
Pout @VGG=5V
50
40
40
30
30
T @Pout=20W
20
VDD=12.5V
20
10
Pin=50mW
10
in @Pout=20W
0
0
750 770 790 810 830 850 870
FREQUENCY f(MHz)
2nd, 3rd HARMONICS versus FREQUENCY
-20
VDD=12.5V
-30
Pin=50mW
-40
-50
2nd @Pout=20W
-60
3rd @Pout=20W
-70
750 770 790 810 830 850 870
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
10
0
-15
IDD
8
f=764MHz,
VDD=12.5V, 4
VGG=5V
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
10
0
-15
IDD
8
f=806MHz,
VDD=12.5V, 4
VGG=5V
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
Pout
20
40
16
30
12
20
IDD
8
f=825MHz,
10
VDD=12.5V, 4
VGG=5V
0
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
IDD
8
f=870MHz,
10
VDD=12.5V, 4
VGG=5V
0
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
Publication Date : Jul.2011
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
IDD
8
f=851MHz,
10
VDD=12.5V, 4
VGG=5V
0
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
3
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