PMK27XP Просмотр технического описания (PDF) - Philips Electronics
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PMK27XP Datasheet PDF : 11 Pages
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Philips Semiconductors
PMK27XP
P-channel extremely low level FET
0
VGS(th)
(−V)
0.4
03an42
1800
C
(pF)
1200
03an40
Ciss
0.8
600
Coss
1.2
−100
0
100
200
Tj (°C)
Crss
0
0
5
10
15 VDS(−V) 20
ID = −250 µA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature; typical values.
VGS = 0 V; f = 1 MHz
Fig 10. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
32
IS
(−A)
24
03am07
6
VGS
(−V)
4
16
Tj = 25 °C
2
8
03am03
0
0
0.4
0.8 VSD (−V) 1.2
0
0
4
8
12 QG (nC) 16
VGS = 0 V
Fig 11. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = −6.5 A; VDD = −15 V
Fig 12. Gate-source voltage as a function of gate
charge; typical values.
9397 750 11549
Product data
Rev. 01 — 15 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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