PMK27XP Просмотр технического описания (PDF) - Philips Electronics
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PMK27XP Datasheet PDF : 11 Pages
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Philips Semiconductors
PMK27XP
P-channel extremely low level FET
03am04
40
32
−4.5 V
ID
−4 V
ID
(−A) −5 V
−3.5 V
(-A)
30
24
−3 V
03am06
20
16
−2.5 V
10
−2 V
VGS = −1.5 V
0
0
1.5
3 VDS (−V) 4.5
8
25 °C
125 °C
0
0
1.5
−55 °C
3 VGS (−V) 4.5
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = −55 °C, 25 °C and 125 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
60
RDSon
(mΩ )
40
−2.5 V
20 VGS = −4.5 V
03am05
1.6
a
1.2
0.8
0.4
03an41
0
0
4
8
ID (−A) 12
0
−100
0
100 Tj (°C) 200
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -R---D----RS---oD---n-S-(--o2--5-n--°--C---)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11549
Product data
Rev. 01 — 15 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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