PMK27XP Просмотр технического описания (PDF) - Philips Electronics

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PMK27XP

P-channel extremely low level FET

Philips Electronics 

Philips Semiconductors

PMK27XP

P-channel extremely low level FET

6. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

ID = −250 µA; VGS = 0 V

ID = −250 µA; VDS = VGS; Figure 9

VGS = 0 V; VDS = −20 V

VGS = 0 V; VDS = −16 V; Tj = 70 °C

VGS = ±12 V; VDS = 0 V

VGS = −4.5 V; ID = −6.5 A; Figure 7 and 8

VGS = −2.5 V; ID = −5 A; Figure 7 and 8

Dynamic characteristics

Qg(tot)

Qgs

total gate charge

gate-source charge

ID = −6.5 A; VDD = −15 V; VGS = −4.5 V;

Figure 12

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

VGS = 0 V; VDS = −10 V; f = 1 MHz;

Figure 10

Crss

td(on)

tr

reverse transfer capacitance

turn-on delay time

rise time

VDD = −15 V; ID = −6.5 A; VGS = −4.5 V;

RG = 6 Ω

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VSD

source-drain (diode forward) voltage IS = −6.5 A; VGS = 0 V; Figure 11

Min Typ Max Unit

−20 -

−0.6 -

-

-

-

-

-

-

-

27

-

46

-

V

-

V

−1 µA

−5 µA

100 nA

35 mΩ

60 mΩ

-

13.6 -

nC

-

2.3 -

nC

-

5.5 -

nC

-

1044 -

pF

-

273 -

pF

-

211 -

pF

-

10 -

ns

-

35 -

ns

-

38 -

ns

-

50 -

ns

-

-

−1.5 V

9397 750 11549

Product data

Rev. 01 — 15 January 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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