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PMK27XP

P-channel extremely low level FET

Philips Electronics 

Philips Semiconductors

PMK27XP

P-channel extremely low level FET

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

drain-source voltage (DC)

ID

drain current

VGS

gate-source voltage (DC)

IDM

peak drain current

Ptot

total power dissipation

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

Tamb = 25 °C

VGS = −4.5 V; tp < 10s

Tamb = 25 °C; Figure 2

Tamb = 70 °C; Figure 2

VGS = −4.5 V; tp > 10s

Tamb = 25 °C; Figure 2

Tamb = 70 °C; Figure 2

Tamb = 25 °C; pulsed; tp ≤ 300 µs; Figure 3

Tamb = 25 °C; tp < 10s; Figure 1

Tamb = 25 °C; tp > 10s; Figure 1

IS

source (diode forward) current (DC) Tamb = 25 °C

Min Max Unit

-

−20 V

-

−6.5 A

-

−5.2 A

-

−4.6 A

-

−3.7 A

-

−12 V

-

−32 A

-

2.5

W

-

1.25 W

−55 +150 °C

−55 +150 °C

-

−1.7 A

9397 750 11549

Product data

Rev. 01 — 15 January 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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