PFM19030 Просмотр технического описания (PDF) - Cree, Inc

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Компоненты Описание

производитель

PFM19030

1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

Cree, Inc 

PFM19030

Typical Module Performance

T=+25 °C, unless otherwise noted. Data is for module in a test fixture with external matching elements. See following

page for test fixture details.

EDGE EVM & Efficiency vs. Pout

12

30.0%

10

Efficiency

RMS EVM %

8

Efficiency

6

25.0%

20.0%

15.0%

4

10.0%

EVM

2

5.0%

0

0.0%

26 28 30 32 34 36 38 40 42 44

Average Output Power (dBm)

2-Tone 3rd Order IMD Rejection vs. Pout

& First Stage Quiescent Bias Currents

-20

IM3(75/250)

-25

IM3(82/250)

-30

IM3(67/250)

-35

Idsq1=Opt-20%

-40

IM3(60/250)

-10%

-45

+10%

-50

Idsq1=Optimum,

-55

75 mA

-60

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

Average Output Power (dBm)

EDGE ACPR vs. Average Pout

0

-10

lower 200khz

upper 200khz

-20

lower 250khz

-30

upper 250khz

lower 400khz

-40

upper 400khz

-50

lower 600khz

upper 600khz

-60

lower 1.2mhz

-70

upper 1.2mhz

-80

36

37

38

39

40

41

42

43

Average Output Power (dBm)

2-Tone 3rd Order IMD Rejection vs. Pout

& Second Stage Quiescent Bias Currents

-20

IM3(75/250)

-25

IM3(75/275)

-30

IM3(75/225)

-35

IM3(75/200)

Idsq2=Optimum -20%

-40

-45

+10%

-50

-10%

-55

Idsq2 = Optimum,

250 mA

-60

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

Average Output Power (dBm)

Page 6 of 15 Specifications subject to change without notice. U.S. Patent No. 6,822,321

http://www.cree.com/

Rev. 2

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