PBMB75A6 Просмотр технического описания (PDF) - Nihon Inter Electronics
Номер в каталоге
Компоненты Описание
производитель
PBMB75A6 Datasheet PDF : 3 Pages
| |||
PBMB75A6
Fig.1- Output Characteristics (Typical)
150
VGE=20V 12V
TC=25℃
15V
125
10V
100
75
9V
50
25
8V
7V
00
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 1 2 5 ℃
IC= 3 0 A
150A
14
75A
12
10
8
6
4
2
00
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
20000
10000
5000
Cies
Coes
Cre s
VGE = 0 V
f=1MHZ
TC= 2 5 ℃
2000
1000
500
200
100
50
0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25℃
I C= 3 0 A
150A
14
75A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=4Ω
TC=25℃
350
14
300
12
250
10
200
8
VCE = 3 0 0 V
150
6
200V
100
4
100V
50
2
0
0
0
75
150
225
300
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=10Ω
VGE = ± 1 5 V
0.8 TC=25℃
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2
tf
0.1
tr
0
0
20
40
60
80
Collector Current IC (A)
Share Link: 