PBL386212QNT Просмотр технического описания (PDF) - Ericsson
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PBL386212QNT Datasheet PDF : 16 Pages
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PBL 386 21/2
Maximum Ratings
Parameter
Temperature, Humidity
Storage temperature range
Operating temperature range
Operating junction temperature range, Note 1
Power supply, -40 °C ≤ TAmb ≤ +85 °C
VCC with respect to A/BGND
VBat2 with respect to A/BGND
VBat with respect to A/BGND, continuous
VBat with respect to A/BGND, 10 ms
Power dissipation
Continuous power dissipation at TAmb ≤ +85 °C
Ground
Voltage between AGND and BGND
Relay Driver
Ring relay supply voltage
Ring trip comparator
Input voltage
Input current
Digital inputs, outputs (C1, C2, C3, DET)
Input voltage
Output voltage
TIPX and RINGX terminals, -40°C < TAmb < +85°C, VBat = -50V
Maximum supplied TIPX or RINGX current
TIPX or RINGX voltage, continuous (referenced to AGND), Note 2
TIPX or RINGX, pulse < 10 ms, tRep > 10 s, Note 2
TIPX or RINGX, pulse < 1 µs, tRep > 10 s, Note 2
TIPX or RINGX, pulse < 250 ns, tRep > 10 s, Notes 2 & 3
Symbol
TStg
TAmb
TJ
VCC
VBat2
VBat
VBat
PD
VG
Min
-55
-40
-40
-0.4
VBat
-75
-80
-0,3
Max
Unit
+150
°C
+110
°C
+140
°C
6.5
V
0.4
V
0.4
V
0.4
V
1.5
W
0,3
V
BGND+14 V
VDT, VDR
VBat
IDT, IDR
-5
VID
-0.4
VOD
-0.4
AGND V
5
mA
VCC
V
VCC
V
ITIPX, IRINGX -100
+100
mA
VTA, VRA
-80
2
V
VTA, VRA VBat -10
5
V
VTA, VRA VBat -25
10
V
VTA, VRA
VBat -35
15
V
Recommended Operating Condition
Parameter
Ambient temperature
VCC with respect to AGND
VBat with respect to AGND
AGND with respect to BGND
Symbol
Min
Max
Unit
TAmb
-40
+85
°C
VCC
4.75
5.25
V
VBat
-58
-8
V
VG
-100
100
mV
Notes
1. The circuit includes thermal protection. Operation at or above 140°C junction temperature may degrade device reliability.
2. With the diodes DVB and DVB2 included, see figure 12.
3. RF1 and RF2 ≥ 20 Ω is also required. Pulse is applied to TIP and RING outside RF1 and RF2.
2
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