NIS5101
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
POWER FET
Charging Time (Turn−On to Rated Max Current)
ON Resistance
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
tchg
RDSon
IDSS
−
5.0
−
ms
−
43
50
mW
−
10
−
mA
Sense Voltage Tolerance (Vinput = 48 V, RextILIMIT = 20 W)
Output Capacitance (VDS = 48 Vdc, VGS = 0 Vdc, f = 10 kHz)
THERMAL LIMIT
VSense
−
−
3.0
−
%
−
326
−
pF
Shutdown Junction Temperature (Note 4)
Hysteresis (Note 4)
OVER/UNDERVOLTAGE
TSD
Thyst
125
135 145
°C
35
40
45
°C
Turn−On Voltage (RextUVLO = R)
Hysteresis (RextUVLO = R)
Turn−On Voltage (RextUVLO = 270 kW)
Hysteresis (RextUVLO = 270 kW)
Zener Voltage (UVLO Pin Voltage at Turn−On)
OVLO Threshold (Input + Increasing, RextOVLO = R)
OVLO Threshold (Input + Increasing, RextOVLO = 300 kW)
OVLO Hysteresis (Input + Decreasing, RextOVLO = 300 kW)
CURRENT LIMIT
Von
Vhyst
Von
Vhyst
VZ
VOV
VOV
VOVhyst
41.5
46
50.5
V
6.3
8.0
9.7
V
29
33
37
V
3.5
5.0
6.5
V
14.3
16
17.5
V
100
−
−
V
65
74
83
V
3.0
4.7
6.4
V
Short Circuit Current Limit (RextILIMIT = 20 W) (Note 5)
Overload Current Limit (RextILIMIT = 20 W) (Notes 4 and 5)
TOTAL DEVICE
ILIM1
ILIM2
3.5
4.2
5.0
A
5.4
6.0
6.6
A
Bias Current (Operational) (Vinput = 48 V, RUVLO = R)
IBias
−
1.4
−
mA
Bias Current (Non−Operational) (Vinput = 30 V, RUVLO = R)
IBias
−
800
−
mA
Minimum Operating Voltage (RUVLO = 30 kW)
Vinmin
−
18
−
V
2. Pulse Test: Pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Verified by design.
5. Please refer to explanation about the device’s current limit operation in short circuit and overload conditions.
http://onsemi.com
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