MW7IC2750NBR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MW7IC2750NBR1

RF Power Field Effect Transistors

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

30

10

S21

20

0

10

−10

0

−20

S11

−10

−30

VDD = 28 Vdc

IDQ1 = 160 mA, IDQ2 = 550 mA

−20

−40

1800 2000 2200 2400 2600 2800 3000 3200 3400

f, FREQUENCY (MHz)

Figure 12. Broadband Frequency Response

1010

109

1st Stage

108

2nd Stage

107

106

90

110 130 150 170 190 210

TJ, JUNCTION TEMPERATURE (°C)

230 250

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 8 W Avg., and PAE = 17%.

MTTF calculator available at http:/www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 13. MTTF versus Junction Temperature

RF Device Data

Freescale Semiconductor

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

9

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