MW7IC2750NR1(2010) Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MW7IC2750NR1
(Rev.:2010)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

27

26.8 PAE

19

Gps

18

26.6

17

26.4

16

26.2

VDD = 28 Vdc, Pout = 8 W (Avg.), IDQ1 = 160 mA

IDQ2 = 550 mA, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz

15

26 Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

-50

-14

-0.6

25.8 Probability on CCDF

-51

-16

-0.8

25.6 IRL

PARC

-52

-18

-1

25.4

-53

-20

-1.2

25.2 ACPR

-54

-22

-1.4

25

-55

-24

-1.6

2500 2525 2550 2575 2600 2625 2650 2675 2700

f, FREQUENCY (MHz)

Figure 5. WiMAX Broadband Performance @ Pout = 8 Watts Avg.

27

PAE

26.8

12.5

Gps

11.5

26.6

10.5

26.4 VDD = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 160 mA

26.2 IDQ2 = 550 mA, OFDM 802.16d, 64 QAM 3/4, 4 Bursts

10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB

26 @ 0.01% Probability on CCDF

25.8

25.6

25.4 IRL

PARC

9.5

8.5

-56

-13

0

-57

-15

-0.2

-58

-17

-0.4

-59

-19

-0.6

25.2 ACPR

25

-60

-21

-0.8

-61

-23

-1

2500 2525 2550 2575 2600 2625 2650 2675 2700

f, FREQUENCY (MHz)

Figure 6. WiMAX Broadband Performance @ Pout = 4 Watts Avg.

29

IDQ2 = 826 mA

28

688 mA

27

550 mA

26

25 412 mA

24

23 275 mA

22

0.1

1

VDD = 28 Vdc

IDQ1 = 160 mA

f = 2600 MHz

10

100

Pout, OUTPUT POWER (WATTS) CW

Figure 7. Power Gain versus Output Power

@ IDQ1 = 160 mA

29

IDQ1 = 240 mA

28

200 mA

27

160 mA

26

25 120 mA

24

23 80 mA

22

0.1

1

VDD = 28 Vdc

IDQ2 = 550 mA

f = 2600 MHz

10

100

Pout, OUTPUT POWER (WATTS) CW

Figure 8. Power Gain versus Output Power

@ IDQ2 = 550 mA

RF Device Data

Freescale Semiconductor

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

7

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