MW7IC2750NR1(2010) Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MW7IC2750NR1
(Rev.:2010)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Zo = 50 Ω

f = 2500 MHz

f = 2700 MHz

Zin

f = 2700 MHz

f = 2500 MHz

Zload

VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg.

f

Zin

MHz

W

Zload

W

2500

49.58 + j35.82

3.52 - j1.79

2525

50.78 + j36.71

3.46 - j1.82

2550

52.04 + j37.58

3.37 - j1.86

2575

53.39 + j38.45

3.24 - j1.88

2600

54.82 + j39.30

3.09 - j1.87

2625

56.35 + j40.14

2.94 - j1.84

2650

57.96 + j40.95

2.77 - j1.77

2675

59.68 + j41.74

2.60 - j1.66

2700

61.50 + j42.49

2.44 - j1.56

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Device

Under Test

Output

Matching

Network

RF Device Data

Freescale Semiconductor

Z in

Z load

Figure 16. Series Equivalent Source and Load Impedance

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

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