MW7IC2750NR1(2010) Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC2750NR1
(Rev.:2010)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

CW Application

(Case Temperature 80°C, Pout = 50 W CW)

Stage 1, 28 Vdc, IDQ1 = 160 mA

Stage 2, 28 Vdc, IDQ2 = 550 mA

Symbol

VDS

VGS

VDD

Tstg

TC

TJ

Pin

Symbol

RθJC

Value

-0.5, +65

-6.0, +10

32, +0

-ā65 to +150

150

225

25

Value (2,3)

3.0

0.7

Unit

Vdc

Vdc

Vdc

°C

°C

°C

dBm

Unit

°C/W

Final Application

Stage 1, 28 Vdc, IDQ1 = 160 mA

2.9

(Case Temperature 70°C, Pout = 8 W CW)

Stage 2, 28 Vdc, IDQ2 = 550 mA

0.7

Driver Application

Stage 1, 28 Vdc, IDQ1 = 160 mA

2.8

(Case Temperature 65°C, Pout = 4 W CW)

Stage 2, 28 Vdc, IDQ2 = 550 mA

0.7

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

1

μAdc

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 46 μAdc)

VGS(th)

1

2

3

Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test)

VGS(Q)

3

3.8

4.5

Vdc

Stage 1 — Dynamic Characteristics (4)

Input Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

550

—

pF

ăĂ1. Continuous use at maximum temperature will affect MTTF.

Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Ăă4. Part internally matched both on input and output.

(continued)

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

RF Device Data

2

Freescale Semiconductor

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