MW7IC2240NBR1 Просмотр технического описания (PDF) - Freescale Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MW7IC2240NBR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

32

IDQ1 = 90 mA

31

IDQ2 = 420 mA

f = 2140 MHz

30

29

28

27

28 V 32 V

26

VDD = 24 V

25

0 10 20 30 40 50 60 70 80

Pout, OUTPUT POWER (WATTS) CW

Figure 15. Power Gain versus Output Power

36

34

TC = −30_C

32

25_C

30

85_C

28

IDQ1 = 90 mA

IDQ2 = 420 mA

26

Pout = 15 W

2060 2080 2100 2120 2140 2160 2180 2200 2220

f, FREQUENCY (MHz)

Figure 16. Power Gain versus Frequency

109

108

1st Stage

107

2nd Stage

106

105

90

110 130

150 170

190 210

230 250

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 14%.

MTTF calculator available at http:/www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 17. MTTF versus Junction Temperature

RF Device Data

Freescale Semiconductor

MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1

9

Share Link: