MW7IC2240GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor
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MW7IC2240GNR1 Datasheet PDF : 24 Pages
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TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, IDQ1 = 90 mA
f1 = 2135 MHz, f2 = 2145 MHz
−20 Two−Tone Measurements, 10 MHz Tone Spacing
−10
VDD = 28 Vdc, IDQ2 = 420 mA
f1 = 2135 MHz, f2 = 2145 MHz
−20 Two−Tone Measurements, 10 MHz Tone Spacing
−30 IDQ2 = 210 mA
630 mA
−40
−50
315 mA
525 mA
135 mA
−30
IDQ1 = 45 mA
67.5 mA
−40
112.5 mA
−50
135 mA 90 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Third Order Intermodulation Distortion
versus Output Power @ IDQ1 = 90 mA
−10
VDD = 28 Vdc, IDQ1 = 90 mA
−20
IDQ2 = 420 mA, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
7th Order
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Intermodulation Distortion
Products versus Output Power
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 10. Third Order Intermodulation Distortion
versus Output Power @ IDQ2 = 420 mA
−10
VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 90 mA
IDQ2 = 420 mA, Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3−U
−30
IM3−L
−40
IM5−U
IM5−L
IM7−U
−50
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 12. Intermodulation Distortion
Products versus Tone Spacing
54
53
Ideal
P6dB = 47.77 dBm (59.84 W)
52
51
P3dB = 57.22 dBm (52.76 W)
50
49 P1dB = 46.23 dBm (42 W)
48
47
Actual
46
45
VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA
44
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2140 MHz
43
11 12 13 14 15 16 17 18 19 20 21 22
Pin, INPUT POWER (dBm)
Figure 13. Pulsed CW Output Power versus
Input Power
38
36 Gps
34
32
TC = −30_C
25_C
−30_C
50
45
25_C
40
85_C
35
30
85_C
30
28
25
26
24
PAE
22
20
1
VDD = 28 Vdc
IDQ1 = 90 mA
IDQ2 = 420 mA
f = 2140 MHz
10
20
15
10
5
100
Pout, OUTPUT POWER (WATTS) CW
Figure 14. Power Gain and Power Added
Efficiency versus CW Output Power
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
8
RF Device Data
Freescale Semiconductor
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