MW7IC2240NBR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC2240NBR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA,

Pout = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB

@ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

28

30

33

dB

Power Added Efficiency

PAE

12

14

—

%

Adjacent Channel Power Ratio

ACPR

—

- 50

- 46

dBc

Input Return Loss

IRL

—

- 16

- 12

dB

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110 - 2170 MHz

Pout @ 1 dB Compression Point, CW

P1dB

—

40

—

Video Bandwidth @ 40 W PEP Pout where IM3 = - 30 dBc

(Tone Spacing from 100 kHz to VBW)

VBW

—

10

—

ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

W

MHz

Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 40 W CW

Average Group Delay @ Pout = 40 W CW, f = 2140 MHz

Part - to - Part Insertion Phase Variation @ Pout = 40 W CW,

f = 2140 MHz, Six Sigma Window

GF

—

0.1

—

dB

Φ

—

1.08

—

°

Delay

—

1.98

—

ns

ΔΦ

—

18.3

—

°

Gain Variation over Temperature

( - 30°C to +85°C)

ΔG

—

0.05

—

dB/°C

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.004

—

dBm/°C

MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1

4

RF Device Data

Freescale Semiconductor

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