Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA,
Pout = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB
@ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
28
30
33
dB
Power Added Efficiency
PAE
12
14
—
%
Adjacent Channel Power Ratio
ACPR
—
- 50
- 46
dBc
Input Return Loss
IRL
—
- 16
- 12
dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110 - 2170 MHz
Pout @ 1 dB Compression Point, CW
P1dB
—
40
—
Video Bandwidth @ 40 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
VBW
—
10
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
W
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 40 W CW
Average Group Delay @ Pout = 40 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ Pout = 40 W CW,
f = 2140 MHz, Six Sigma Window
GF
—
0.1
—
dB
Φ
—
1.08
—
°
Delay
—
1.98
—
ns
ΔΦ
—
18.3
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.05
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.004
—
dBm/°C
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
4
RF Device Data
Freescale Semiconductor