MW7IC2240NBR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC2240NBR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Zo = 50 Ω

f = 2220 MHz

Zload

f = 2060 MHz

Zin

f = 2060 MHz

f = 2220 MHz

VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg.

f

Zin

MHz

W

Zload

W

2060

48.171 + j6.940

6.868 - j9.687

2080

52.454 + j11.553

6.432 - j8.942

2100

55.468 + j8.729

6.051 - j8.216

2120

56.312 + j12.000

5.729 - j7.545

2140

58.860 + j9.463

5.444 - j6.869

2160

57.596 + j11.427

5.193 - j6.201

2180

59.603 + j10.690

4.958 - j5.578

2200

56.867 + j10.012

4.743 - j4.969

2220

58.144 + j9.805

4.577 - j4.353

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Device

Under Test

Output

Matching

Network

RF Device Data

Freescale Semiconductor

Z in

Z load

Figure 20. Series Equivalent Input and Load Impedance

MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1

11

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