MW7IC18100GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor
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MW7IC18100GNR1
Freescale Semiconductor
MW7IC18100GNR1 Datasheet PDF : 32 Pages
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TYPICAL CHARACTERISTICS — 1900 MHz
31
5
30
IDQ1 = 180 mA
IDQ2 = 1000 mA
f = 1960 MHz
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
4 EDGE Modulation
29
28
28 V
VDD = 24 V
32 V
27
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain versus Output Power
3
2
Pout = 50 W Avg.
1
30 W Avg. 40 W Avg.
0
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 16. EVM versus Frequency
−55
SR @ 400 kHz
−60
Pout = 50 W Avg.
40 W Avg.
−65
30 W Avg.
−70
VDD1 = 28 Vdc, VDD2 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 815 mA
f = 1960 MHz, EDGE Modulation
−75
SR @ 600 kHz
−80
50 W Avg.
30 W Avg.
40 W Avg.
−85
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 17. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−40
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1960 MHz, EDGE Modulation
−50
−60
25_C
TC = −30_C
85_C
−70
−80
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Spectral Regrowth at 400 kHz
versus Output Power
−50
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1960 MHz, EDGE Modulation
−60
−70
TC = 85_C 25_C
−30_C
−80
−90
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Spectral Regrowth at 600 kHz
versus Output Power
16
14
VDD1 = 28 Vdc
IDQ1 = 215 mA
12 IDQ2 = 800 mA
f = 1960 MHz
10 EDGE Modulation
8
6
4
PAE
80
TC = 85_C
−30_C
70
25_C
60
50
85_C 40
25_C
30
20
2
EVM
10
0
0
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. EVM and Power Added Efficiency
versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
8
RF Device Data
Freescale Semiconductor
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