MW7IC18100GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA, 1930-1990 MHz Bandwidth

Gain Flatness in 60 MHz Bandwidth @ Pout = 100 W CW

GF

—

0.37

—

dB

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 100 W CW

Φ

—

0.502

—

°

Average Group Delay @ Pout = 100 W CW, f = 1960 MHz

Delay

—

2.57

—

ns

Part - to - Part Insertion Phase Variation @ Pout = 100 W CW,

f = 1960 MHz, Six Sigma Window

ΔΦ

—

63.65

—

°

Gain Variation over Temperature

( - 30°C to +85°C)

ΔG

—

0.048

—

dB/°C

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.004

—

dBm/°C

RF Device Data

Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

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