MW7IC18100GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain- Source Voltage

Gate- Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Table 2. Thermal Characteristics

Characteristic

VDSS

VGS

Tstg

TC

TJ

Symbol

- 0.5, +65

- 0.5, +6

- 65 to +200

150

225

Value (2,3)

Vdc

Vdc

°C

°C

°C

Unit

Thermal Resistance, Junction to Case

GSM Application

(Pout = 100 W CW)

Stage 1, 28 Vdc, IDQ1 = 180 mA

Stage 2, 28 Vdc, IDQ2 = 1000 mA

Table 3. ESD Protection Characteristics

RθJC

°C/W

2.0

0.51

Test Methodology

Class

Human Body Model (per JESD22 - A114)

O (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W CW, IDQ1 = 180 mA, IDQ2 = 1000 mA, f = 1990 MHz.

Power Gain

Gps

27

30

31

dB

Input Return Loss

IRL

—

- 15

- 10

dB

Power Added Efficiency

PAE

45

48

—

%

Pout @ 1 dB Compression Point, CW

P1dB

100

112

—

W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 215 mA, IDQ2 = 800 mA,

Pout = 40 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz EDGE Modulation.

Power Gain

Gps

—

31

—

dB

Power Added Efficiency

PAE

—

35

—

%

Error Vector Magnitude

EVM

—

1.5

—

% rms

Spectral Regrowth at 400 kHz Offset

SR1

—

- 63

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

- 80

—

dBc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

(continued)

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

2

RF Device Data

Freescale Semiconductor

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