MW7IC18100GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 1800 MHz

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Ideal

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P3dB = 52.46 dBm (176.19 W)

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P2dB = 52.19 dBm (165.57 W)

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P1dB = 51.72 dBm (148.59 W)

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Actual

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VDD = 28 Vdc, IDQ1 = 180 mA

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IDQ2 = 1000 mA, Pulsed CW

12 μsec(on) 1% Duty Cycle

f = 1880 MHz

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Pin, INPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V

Test Impedances per Compression Level

Zsource

Ω

Zload

Ω

P3dB

83.04 - j2.44

1.36 - j3.19

Figure 47. Pulsed CW Output Power

versus Input Power @ 28 V

RF Device Data

Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

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