MW7IC18100GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor
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MW7IC18100GNR1
Freescale Semiconductor
MW7IC18100GNR1 Datasheet PDF : 32 Pages
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TYPICAL CHARACTERISTICS — 1800 MHz
32
4
IDQ1 = 180 mA
VDD = 28 Vdc
IDQ2 = 1000 mA
IDQ1 = 215 mA, IDQ2 = 800 mA
31
f = 1840 MHz
EDGE Modulation
3
30
Pout = 50 W Avg.
2
29
40 W Avg.
28
28 V
VDD = 24 V
32 V
27
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Figure 39. Power Gain versus Output Power
1
30 W Avg.
0
1760 1780 1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
Figure 40. EVM versus Frequency
−55
−60 SR @ 400 kHz
−65
Pout = 50 W Avg.
40 W Avg.
−70
30 W Avg. VDD1 = 28 Vdc, VDD2 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 815 mA
f = 1840 MHz, EDGE Modulation
−75
SR @ 600 kHz
−80
30 W Avg.
50 W Avg.
40 W Avg.
−85
1760 1780 1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
Figure 41. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−40
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1840 MHz, EDGE Modulation
−50
−60
25_C
TC = −30_C
85_C
−70
−80
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 42. Spectral Regrowth at 400 kHz
versus Output Power
−50
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1840 MHz, EDGE Modulation
−60
−70
−30_C
TC = 85_C
25_C
−80
−90
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 43. Spectral Regrowth at 600 kHz
versus Output Power
14
VDD1 = 28 Vdc
12 IDQ1 = 215 mA
IDQ2 = 800 mA
10 f = 1840 MHz
EDGE Modulation
8
6
4
TC = −30_C
25_C
PAE
70
25_C
85_C
60
50
85_C
40
−30_C 30
20
2
10
EVM
0
0
1
10
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 44. EVM and Power Added Efficiency
versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
18
RF Device Data
Freescale Semiconductor
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