MT28F008B3WG-9B Просмотр технического описания (PDF) - Micron Technology

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MT28F008B3WG-9B

FLASH MEMORY

Micron Technology 

8Mb

SMART 3 BOOT BLOCK FLASH MEMORY

FUNCTIONAL DESCRIPTION

The MT28F800B3 and MT28F008B3 Flash devices in-

corporate a number of features ideally suited for system

firmware. The memory array is segmented into indi-

vidual erase blocks. Each block may be erased without

affecting data stored in other blocks. These memory

blocks are read, written and erased with commands to

the command execution logic (CEL). The CEL controls

the operation of the internal state machine (ISM), which

completely controls all WRITE, BLOCK ERASE and VERIFY

operations. The ISM protects each memory location from

over-erasure and optimizes each memory location for

maximum data retention. In addition, the ISM greatly

simplifies the control necessary for writing the device in-

system or in an external programmer.

The Functional Description provides detailed infor-

mation on the operation of the MT28F800B3 and

MT28F008B3 and is organized into these sections:

• Overview

• Memory Architecture

• Output (READ) Operations

• Input Operations

• Command Set

• ISM Status Register

• Command Execution

• Error Handling

• WRITE/ERASE Cycle Endurance

• Power Usage

• Power-Up

OVERVIEW

SMART 3 TECHNOLOGY (B3)

Smart 3 operation allows maximum flexibility for in-

system READ, WRITE and ERASE operations. WRITE and

ERASE operations may be executed with a VPP voltage of

3.3V or 5V. Due to process technology advances, 5V VPP is

optimal for application and production programming.

ELEVEN INDEPENDENTLY ERASABLE MEMORY

BLOCKS

The MT28F800B3 and MT28F008B3 are organized into

eleven independently erasable memory blocks that al-

low portions of the memory to be erased without affect-

ing the rest of the memory data. A special boot block is

hardware-protected against inadvertent erasure or writ-

ing by requiring either a super-voltage on the RP# pin or

driving the WP# pin HIGH. (The WP# pin does not apply

to the SOP package.) One of these two conditions must

exist along with the VPP voltage (3.3V or 5V) on the VPP pin

before a WRITE or ERASE is performed on the boot

block. The remaining blocks require that only the VPP

voltage be present on the VPP pin before writing or

erasing.

HARDWARE-PROTECTED BOOT BLOCK

This block of the memory array can be erased or

written only when the RP# pin is taken to VHH or when the

WP# pin is brought HIGH. (The WP# pin does not apply to

the SOP package.) This provides additional security for

the core firmware during in-system firmware updates

should an unintentional power fluctuation or system

reset occur. The MT28F800B3 and MT28F008B3 are avail-

able with the boot block starting at the bottom of the

address space (“B” suffix) and the top of the address

space (“T” suffix).

SELECTABLE BUS SIZE (MT28F800B3)

The MT28F800B3 allows selection of an 8-bit

(1 Meg x 8) or 16-bit (512K x 16) data bus for reading and

writing the memory. The BYTE# pin is used to select the

bus width. In the x16 configuration, control data is read

or written only on the lower eight bits (DQ0–DQ7).

Data written to the memory array utilizes all active

data pins for the selected configuration. When the x8

configuration is selected, data is written in byte form;

when the x16 configuration is selected, data is written in

word form.

INTERNAL STATE MACHINE (ISM)

BLOCK ERASE and BYTE/WORD WRITE timing are

simplified with an ISM that controls all erase and write

algorithms in the memory array. The ISM ensures protec-

tion against overerasure and optimizes write margin to

each cell.

During WRITE operations, the ISM automatically in-

crements and monitors WRITE attempts, verifies write

margin on each memory cell and updates the ISM status

register. When BLOCK ERASE is performed, the ISM au-

tomatically overwrites the entire addressed block (elimi-

nates overerasure), increments and monitors ERASE at-

tempts, and sets bits in the ISM status register.

ISM STATUS REGISTER

The ISM status register enables an external processor

to monitor the status of the ISM during WRITE and ERASE

operations. Two bits of the 8-bit status register are set and

cleared entirely by the ISM. These bits indicate whether

the ISM is busy with an ERASE or WRITE task and when an

ERASE has been suspended. Additional error informa-

tion is set in three other bits: VPP status, write status and

erase status.

COMMAND EXECUTION LOGIC (CEL)

The CEL receives and interprets commands to the

device. These commands control the operation of the

ISM and the read path (i.e., memory array, ID register or

status register). Commands may be issued to the CEL

8Mb Smart 3 Boot Block Flash Memory

Q10_3.p65 – Rev. 3, Pub. 10/01

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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