MS2475 Просмотр технического описания (PDF) - Microsemi Corporation
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MS2475 Datasheet PDF : 5 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF
• 720 WATTS (min.) IFF 1030 or 1090 MHz
• REFRACTORY GOLD METALLIZATION
• 6.8 dB MIN. GAIN
• LOW THERMAL RESISTANCE FOR RELIABILTY AND
RUGGEDNESS
• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2475 is a silicon NPN power transistor designed for IFF
applications. The MS2475 is designed to exceed the high peak
power requirements of today's IFF systems. Hermetic sealing,
gold metalization and internal input matching provide superior
long term reliability and broadband performance.
MS2475
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCC
Collector-Supply Voltage*
IC
PDISS
Device Current*
Power Dissipation*
(TC ≤ 100°C)
TJ
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
MSC0937A.DOC 10-20-98
Value
55
45
1670
+200
- 65 to + 200
0.06
Unit
V
A
W
°C
°C
°C/W
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