MMG3003NT1(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MMG3003NT1
(Rev.:2006)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Table 5. Functional Pin Description

Pin

Number

Pin Function

1

RFin

2

Ground

3

RFout/DC Supply

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Human Body Model (per JESD 22 - A114)

Machine Model (per EIA/JESD 22 - A115)

Charge Device Model (per JESD 22 - C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

2

123

Figure 1. Functional Diagram

Class

1B (Minimum)

A (Minimum)

IV (Minimum)

Rating

Package Peak Temperature

Unit

1

260

°C

Freescale Semiconductor

RF Product Device Data

MMG3003NT1

6-3

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