2N5086TF Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

2N5086TF

PNP General Purpose Amplifier

Fairchild Semiconductor 

PNP General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA= 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

VCB = 10 V, IE = 0

VCB = 35 V, IE = 0

VEB = 3.0 V, IC = 0

50

V

50

V

10

nA

50

nA

50

nA

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 100 µA, VCE = 5.0 V 5086

150

500

5087

250

800

IC = 1.0 mA, VCE = 5.0 V 5086

150

5087

250

IC = 10 mA, VCE = 5.0 V 5086

150

5087

250

VCE(sat)

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

0.3

V

VBE(on)

Base-Emitter On Voltage

IC = 1.0 mA, VCE = 5.0 V

0.85

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 500 µA,VCE= 5.0 V,f= 20 MHz

40

MHz

Ccb

Collector-Base Capacitance

VCB = 5.0 V, IE = 0, f = 100 kHz

4.0

pF

hfe

Small-Signal Current Gain

NF

Noise Figure

IC = 1.0 mA, VCE = 5.0, 5086

150

600

f = 1.0 kHz

5087

250

900

3

IC = 100 µA, VCE = 5.0 V, 5086

3.0

dB

RS = 3.0 kΩ, f = 1.0 kHz 5087

2.0

dB

IC = 20 µA, VCE = 5.0 V,

RS = 10 kΩ,

f = 10 Hz to 15.7 kHz

5086

5087

3.0

dB

2.0

dB

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Spice Model

PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0

Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5

Xtf=8 Rb=10)

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