2N5086TF Просмотр технического описания (PDF) - Fairchild Semiconductor

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2N5086TF

PNP General Purpose Amplifier

Fairchild Semiconductor 

2N5086

2N5087

MMBT5086

MMBT5087

C

C

BE

TO-92

E

SOT-23

B

Mark: 2P / 2Q

PNP General Purpose Amplifier

This device is designed for low level, high gain, low noise general

purpose amplifier applications at collector currents to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

VCBO

Collector-Emitter Voltage

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

TJ, Tstg

Collector Current - Continuous

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

50

50

5.0

100

-55 to +150

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Units

V

V

V

mA

°C

Thermal Characteristics TA= 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Max

2N5086

2N5087

625

5.0

83.3

200

*MMBT5086

*MMBT5087

350

2.8

357

Units

mW

mW/°C

°C/W

°C/W

 2001 Fairchild Semiconductor Corporation

2N5086/2N5087/MMBT5086/MMBT5087, Rev A

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