2N5086(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N5086 Datasheet PDF : 6 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
VCB = 10 V, IE = 0
VCB = 35 V, IE = 0
VEB = 3.0 V, IC = 0
50
V
50
V
10
nA
50
nA
50
nA
ON CHARACTERISTICS
hFE
VCE(sat)
DC Current Gain
IC = 100 µA, VCE = 5.0 V 2N5086
150
2N5087 250
IC = 1.0 mA, VCE = 5.0 V 2N5086
150
2N5087 250
IC = 10 mA, VCE = 5.0 V 2N5086
150
2N5087 250
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
VBE(on)
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
NF
Noise Figure
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
IC = 500 µA,VCE = 5.0 V,f = 20 MHz
40
VCB = 5.0 V, IE = 0, f = 100 kHz
IC = 1.0 mA, VCE = 5.0, 2N5086
150
f = 1.0 kHz
2N5087 250
IC = 100 µA, VCE = 5.0 V, 2N5086
RS = 3.0 kΩ, f = 1.0 kHz 2N5087
IC = 20 µA, VCE = 5.0 V,
RS = 10 kΩ,
f = 10 Hz to 15.7 kHz
2N5086
2N5087
500
800
0.3
0.85
4.0
600
900
3.0
2.0
3.0
2.0
V
V
MHz
pF
dB
dB
dB
dB
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2
Isc=0 Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p
Itf=.17 Vtf=5 Xtf=8 Rb=10)
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