MIP301 Просмотр технического описания (PDF) - Panasonic Corporation
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MIP301 Datasheet PDF : 2 Pages
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Intelligent Power Devices (IPDs)
MIP301
Silicon MOS IC
s Features
q 100V high breakdown voltage MOS FET and CMOS control cir-
cuits are integrated into one chip
q 5V and 3 - 5W output with 24VDC input (Flyback method)
1
2
s Applications
q IPD for DC/DC converter
3
4
unit: mm
8
7
6
5
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter
Symbol Ratings
Unit
Drain voltage
Control voltage
Input voltage
Output current
Control current
Channel temperature
Storage temperature
VD
90
V
VC
8
V
VIN
30
V
ID
1.1
A
IC
0.1
A
Tch
150
°C
Tstg
−55 to +150
°C
0.3
4.2±0.3
6.5±0.3
1: VIN
5: Drain
2: Source 6: Source
3: Source 7: Source
4: Control 8: Source
SO-8P Type Package
s Block Diagram
Control pin
Shunt
regulator
-
+
Shutdown/Auto-restart
+
5.7V
4.7V
-
0 Auto-restart
Power supply
1
for internal
circuit
T
R
Drain pin
Auto-restart current-source
D
Q
Ron X ID
Q
+
-
PWM control
current
Thermal shutdown
circuit
Max Duty
Restarting
trigger circuit
S
Q
R
Q
Power
MOS FET
Clock
Sawtooth
-
+
S
Q
R
Q
Leading edge
blanking
Low pass filter
Minimum ON-time
delay circuit
Source pin
VIN
-
+
1
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