MCRF450 Просмотр технического описания (PDF) - Microchip Technology

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MCRF450

13.56 MHz Read/Write Passive RFID Device

Microchip Technology 

MCRF450/451/452/455

TABLE 2-4: PAD COORDINATES (MICRONS)

Pad Name

Lower

Left X Left Y

Upper

Right X Right Y

Passivation Openings

Pad Width

Pad Height

Ant. Pad A -853.50 -992.10 -764.50 -903.10

89.00

89.00

Ant. Pad B 759.50 -993.70 848.50 -904.70

89.00

VSS

769.10 977.90 858.10 1066.90

89.00

VDD

-839.50 45.50 -750.50 134.50

89.00

CLK

721.10 77.80 810.10 166.80

89.00

FCLK

-821.50 910.70 -732.50 999.70

89.00

Note 1: All coordinates are referenced from the center of the die.

89.00

89.00

89.00

89.00

89.00

Pad

Pad

Center X Center Y

-809.00

804.00

813.60

-795.00

765.60

-777.00

-947.60

-949.20

1022.40

90.00

122.30

955.20

TABLE 2-5: DIE MECHANICAL DIMENSIONS

Specifications

Min

Typ

Max Unit

Comments

Bond pad opening

—

3.5 x 3.5

—

mil Note 1, Note 2

—

89 x 89

—

µm

Die backgrind thickness

7.5

190.5

8

203.2

8.5

215.9

mil Sawed 8” wafer on frame

µm (option = WF) (Note 3)

10

11

12

mil • Bumped, sawed 8” wafer

on frame (option = WFB)

254

279.4

304.8 µm • Unsawed wafer (option = W)

• Unsawed 8” bumped

wafer (option = WB), (Note 3)

Die passivation thickness (multilayer)

—

1.3

—

µm Note 4

Die Size:

Die size X*Y before saw (step size)

Die size X*Y after saw

— 1904 x 2340.8 —

— 1840.5 x 2277.3 —

µm —

µm —

Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at

least 0.1 mil.

2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.

3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as

thick as the application will allow.

4: The Die Passivation Thickness (1.3 µm) can vary by device depending on the mask set used. The

passivation is formed by:

- Layer 1: Oxide (undoped oxide)

- Layer 2: PSG (doped oxide)

- Layer 3: Oxynitride (top layer)

5: The conversion rate is 25.4 µm/mil.

Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to

mechanical and electrostatic damage.

TABLE 2-6: WAFER MECHANICAL SPECIFICATIONS

Specifications

Min

Typ

Max

Wafer Diameter

Die separation line width

Dice per wafer

Batch size

—

8

—

—

80

—

—

6,600

—

—

24

—

Unit

inch

µm

die

wafer

Comments

 2003 Microchip Technology Inc.

DS40232H-page 7

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