MCM101524 Просмотр технического описания (PDF) - Motorola => Freescale
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MCM101524 Datasheet PDF : 8 Pages
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TRUTH TABLE (X = Don’t Care)
S
W
Operation
H
X
Not Enabled
L
H
Read
L
L
Write
Data
X
X
X
Output Current
L
—
Q
IEE
L
IEE
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
VEE Pin Potential (to Ground)
VEE
– 7.0 to + 0.5
V
Voltage Relative to VCC for Any Pin
Except VEE
Vin, Vout VEE – 0.5 to + 0.5 V
Output Current (per I/O)
Iout
– 50
mA
Power Dissipation
PD
2.0
W
Temperature Under Bias
Tbias
– 30 to + 85
°C
Operating Temperature
TJ
0 to + 60
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the OPERATING CONDI-
TIONS. Exposure to higher than recommended voltages for extended periods of time
could affect device reliability.
This device contains circuitry to protect
the inputs against damage due to high static
voltages or electric fields; however, it is ad-
vised that normal precautions be taken to
avoid application of any voltage higher than
maximum rated voltages to these high
impedance circuits.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifica-
tions shown in the tables, after thermal equi-
librium has been established. The circuit is
in a test socket or mounted on a printed cir-
cuit board and transverse air flow of at least
500 linear feet per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 0 V, VEE = – 5.2 V ± 5%, TJ = 0 to + 60°C, Unless Otherwise Noted)
DC OPERATING CONDITIONS AND SUPPLY CURRENTS
Parameter
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Low Current
Input High Current
Chip Select Input Low Current
Operating Power Supply Current: tAVAV = 20 ns (All Outputs Open)*
Quiescent Power Supply Current: fo = 0 MHz (Outputs Open)
Voltage Compensation (VOH)
Voltage Compensation (VOL)
* Address Increment
Symbol
VEE
VIH
VIL
VOH
VOL
IIL
IIH
IIL(CS)
IEE
IEEQ
∆VOH/∆VEE
∆VOL/∆VEE
Min
Typ
Max
Unit
– 5.46
– 5.2
– 4.94
V
– 1165
—
– 880
mV
– 1810
—
– 1475
mV
– 1025
—
– 880
mV
– 1810
—
– 1620
mV
– 50
—
—
µA
—
—
220
µA
0.5
—
170
µA
—
—
– 195
mA
—
—
– 150
mA
± 35 mV/V @ – 4.94 to – 5.46 V
± 60 mV/V @ – 4.94 to – 5.46 V
RISE/FALL TIME CHARACTERISTICS
Parameter
Output Rise Time
Output Fall Time
Symbol Test Condition
Min
Typ
Max
Unit
tr
20% to 80%
0.5
1.0
1.5
ns
tf
20% to 80%
0.5
1.0
1.5
ns
CAPACITANCE (f = 1.0 MHz, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol Typ
Input Capacitance
Address and Data Cin
3.5
S, W Cck
4
Output Capacitance
Q Cout
4
Max
Unit
7
pF
7
8
pF
MCM101524
2
MOTOROLA FAST SRAM
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