DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC78T12CT Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MC78T12CT
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC78T12CT Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MC78T00 Series
ELECTRICAL CHARACTERISTICS (Vin = 17 V, IO = 3.0 A, 0°C TJ 125°C, PO Pmax (Note 6), unless otherwise noted.)
MC78T12AC
MC78T12C
Characteristics
Symbol Min
Typ
Max
Min
Typ Max Unit
Output Voltage
(5.0 mA IO 3.0 A, TJ = +25°C)
(5.0 mA IO 3.0 A,
5.0 mA IO 2.0 A, 14.5 Vdc Vin 27 Vdc)
VO
11.75
12
12.25 11.5
11.5
12
12.5 11.4
Line Regulation (Note 7)
Regline
6.0
45
(14.5 Vdc Vin 35 Vdc, IO = 5.0 mA, TJ = +25°C;
14.5 Vdc Vin 35 Vdc, IO = 1.0 A, TJ = +25°C;
16 Vdc Vin 22 Vdc, IO = 3.0 A, TJ = +25°C;
14.9 Vdc Vin 27 Vdc, IO = 1.0 A)
Vdc
12
12.5
12
12.6
6.0
45
mV
Load Regulation (Note 7)
(5.0 mA IO 3.0 A, TJ = +25°C)
(5.0 mA IO 3.0 A)
Thermal Regulation
(Pulse = 10 ms, P = 20 W, TA = +25°C)
Regload
10
30
15
80
Regtherm
0.001 0.01
mV
10
30
15
80
0.002 0.03 %VO/W
Quiescent Current
(5.0 mA IO 3.0 A, TJ = +25°C)
(5.0 mA IO 3.0 A)
IB
mA
3.5
5.0
3.5
5.0
4.0
6.0
4.0
6.0
Quiescent Current Change
DIB
(14.5 Vdc Vin 35 Vdc, IO = 5.0 mA, TJ = +25°C;
5.0 mA IO 3.0 A, TJ = +25°C;
14.9 Vdc Vin 27 Vdc, IO = 1.0 A)
0.3
1.0
0.3
1.0
mA
Ripple Rejection
(15 Vdc Vin 25 Vdc, f = 120 Hz,
IO = 2.0 A, TJ = 25°C)
RR
57
67
57
67
dB
Dropout Voltage (IO = 3.0 A, TJ = +25°C)
Vin − VO
2.2
2.5
2.2
2.5
Vdc
Output Noise Voltage
(10 Hz f 100 kHz, TJ = +25°C)
Vn
10
10
mV/VO
Output Resistance (f = 1.0 kHz)
RO
2.0
20
mW
Short Circuit Current Limit
(Vin = 35 Vdc, TJ = +25°C)
ISC
1.5
1.5
A
Peak Output Current (TJ = +25°C)
Imax
5.0
5.0
A
Average Temperature Coefficient
of Output Voltage (IO = 5.0 mA)
TCVO
0.5
0.5
mV/°C
6. Although power dissipation is internally limited, specifications apply only for PO Pmax, Pmax = 25 W.
7. Line and load regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account
separately.
Pulse testing with low duty cycle is used.
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]