MBR2045CTF-E1 Просмотр технического описания (PDF) - BCD Semiconductor

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MBR2045CTF-E1

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

BCD Semiconductor 

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

Absolute Maximum Ratings (Each Diode Leg) (Note 1)

Data Sheet

MBR2045C

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

45

V

VR

Average Rectified Forward Current

(Rated VR) TC=139oC

IF(AV)

10

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC=137oC

IFRM

20

A

Non Repetitive Peak Surge Current (Surge applied at rated

load conditions half wave, single phase, 60 Hz)

IFSM

150

A

Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz)

IRRM

1.0

A

Operating Junction Temperature (Note 2)

TJ

150

oC

Storage Temperature Range

TSTG

-65 to 150

oC

Voltage Rate of Change (Rated VR)

dv/dt

10000

V/µs

ESD (Machine Model=C)

>400

V

ESD (Human Body Model=3B)

>8000

V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.

Thermal Characteristics

Parameter

Symbol

Maximum Thermal Resistance

RθJC

RθJA

Condition

Junction to Case

TO-220-3

TO-220F-3

Junction to Ambient

TO-220-3

Value

2.2

4.5

60

Unit

oC/W

Jul. 2008 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

3

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